document number: 93492 for technical questions, contact: ind-modules@vishay.com www.vishay.com revision: 25-may-09 1 power silicon rectifier diodes, 35 a/40 a/60 a 1n1183, 1n3765, 1n1 183a, 1n2128a series vishay high power products description/features ? low leakage current series ? good surge current capability up to 1000 a ? can be supplied to meet stringent military, aerospace and other high reliability requirements ? compliant to rohs directive 2002/95/ec note (1) jedec registered values electrical specifications notes (1) jedec registered values (2) for 1n1183 series and 1n3765 series t c = - 65 c to 190 c ? basic type number indicates cathode to case. for anode to ca se, add ?r? to part number, e.g., 1n1188r, 1n3766r, 1n1186ar, 1n21 35ar product summary i f(av) 35 a/40 a/60 a do-203ab (do-5) major ratings and characteristics parameter test conditions 1n1183 1n3765 1n1183a 1n2128a units i f(av) 35 (1) 35 (1) 40 (1) 60 (1) a t c 140 (1) 140 (1) 150 (1) 140 (1) c i fsm 50 hz 480 380 765 860 a 60 hz 500 (1) 400 (1) 800 (1) 900 (1) i 2 t 50 hz 1140 730 2900 3700 a 2 s 60 hz 1040 670 2650 3400 i 2 t 16 100 10 300 41 000 52 500 a 2 s v rrm range 50 to 600 (1) 700 to 1000 (1) 50 to 600 (1) 50 to 600 (1) v voltage ratings type number v rrm , maximum repetitive peak reverse voltage (t j = - 65 c to 200 c (2) ) v v rm , maximum direct reverse voltage (t j = - 65 c to 200 c (2) ) v 1n1183 1n1183a 1n2128a 50 (1) 50 (1) 1n1184 1n1184a 1n2129a 100 (1) 100 (1) 1n1185 1n1185a 1n2130a 150 (1) 150 (1) 1n1186 1n1186a 1n2131a 200 (1) 200 (1) 1n1187 1n1187a 1n2133a 300 (1) 300 (1) 1n1188 1n1188a 1n2135a 400 (1) 400 (1) 1n1189 1n1189a 1n2137a 500 (1) 500 (1) 1n1190 1n1190a 1n2138a 600 (1) 600 (1) 1n3765 700 (1) 700 (1) 1n3766 800 (1) 800 (1) 1n3767 900 (1) 900 (1) 1n3768 1000 (1) 1000 (1)
www.vishay.com for technical questions, contact: ind-modules@vishay.com document number: 93492 2 revision: 25-may-09 1n1183, 1n3765, 1n1183a, 1n2128a series vishay high power products power silicon rectifier diodes, 35 a/40 a/60 a notes (1) jedec registered values (2) i 2 t for time t x = i 2 t x t x forward conduction parameter symbol test conditions 1n1183 1n3765 1n1183a 1n2128a units maximum average forward current at case temperature i f(av) 1-phase operation, 180 sinusoidal conduction 35 (1) 35 (1) 40 (1) 60 (1) a 140 (1) 140 (1) 150 (1) 140 (1) c maximum peak one cycle non-repetitive surge current i fsm half cycle 50 hz sine wave or 6 ms rectangular pulse following any rated load condition and with rated v rrm applied 480 380 765 860 a half cycle 60 hz sine wave or 5 ms rectangular pulse 500 (1) 400 (1) 800 (1) 900 (1) half cycle 50 hz sine wave or 6 ms rectangular pulse following any rated load condition and with ? v rrm applied following surge = 0 570 455 910 1000 half cycle 60 hz sine wave or 5 ms rectangular pulse 595 475 950 1050 maximum i 2 t for fusing i 2 t t = 10 ms with rated v rrm applied following surge, initial t j = t j maximum 1140 730 2900 3700 a 2 s t = 8.3 ms 1040 670 2650 3400 maximum i 2 t for individual device fusing t = 10 ms with v rrm = 0 following surge, initial t j = t j maximum 1610 1030 4150 5250 t = 8.3 ms 1470 940 3750 4750 maximum i 2 t for individual device fusing i 2 t (2) t = 0.1 to 10 ms, v rrm = 0 following surge 16 100 10 300 41 500 52 500 a 2 s maximum peak forward voltage at maximum forward current (i fm ) v fm t j = 25 c 1.7 (1) 1.8 (1) 1.3 (1) 1.3 (1) v 110 110 126 188 a maximum average reverse current v rrm = 700 i r(av) maximum rated i f(av) and t c -5.0 (1) -- ma v rrm = 800 - 4.0 (1) -- v rrm = 900 - 3.0 (1) -- v rrm = 1000 - 2.0 (1) -- maximum rated i f(av) , v rrm and t c 10 (1) -2.5 (1) 10 (1)
document number: 93492 for technical questions, contact: ind-modules@vishay.com www.vishay.com revision: 25-may-09 3 1n1183, 1n3765, 1n1183 a, 1n2128a series power silicon rectifier diodes, 35 a/40 a/60 a vishay high power products notes (1) jedec registered values (2) recommended for pass-through holes (3) recommended for holed threaded heatsinks fig. 1 - maximum allowable case temperature vs. average forward current, 1n1183 and 1n3765 series fig. 2 - typical low level forward power loss vs. average forward current (si nusoidal current waveform), 1n1183 and 1n3765 series thermal and mechanical specifications parameter symbol test conditions 1n1183 1n3765 1n1183a 1n2128a units maximum operating case temperature range t c - 65 to 190 (1) - 65 to 200 c maximum storage temperature range t stg - 65 to 175 (1) - 65 to 200 maximum internal thermal resistance, junction to case r thjc dc operation 1.00 (1) 1.1 (1) 0.65 (1) c/w thermal resistance, case to sink r thcs mounting surface, smooth, flat and greased 0.25 maximum allowable mounting torque (+ 0 %, - 10 %) not lubricated thread, tighting on nut (2) 3.4 (30) n m (lbf in) lubricated thread, tighting on nut (2) 2.3 (20) not lubricated thread, tighting on hexagon (3) 4.2 (37) lubricated thread, tighting on hexagon (3) 3.2 (28) approximate weight 17 g 0.6 oz. case style jedec do-203ab (do-5)
www.vishay.com for technical questions, contact: ind-modules@vishay.com document number: 93492 4 revision: 25-may-09 1n1183, 1n3765, 1n1183a, 1n2128a series vishay high power products power silicon rectifier diodes, 35 a/40 a/60 a fig. 3 - typical high lev el forward power loss vs. average forward current (si nusoidal current waveform), 1n1183 and 1n3765 series fig. 4 - typical forward voltage vs. forward current, 1n1183 and 1n3765 series fig. 5 - maximum non-repetitive surge current vs. number of current pulses, 1n1183 and 1n3765 series fig. 6 - average forward current vs. maximum allowable case temperature, 1n1183a series fig. 7 - maximum low level forward power loss vs. average forward current, 1n1183a series fig. 8 - maximum high level forward power loss vs. average forward current, 1n1183a series
document number: 93492 for technical questions, contact: ind-modules@vishay.com www.vishay.com revision: 25-may-09 5 1n1183, 1n3765, 1n1183 a, 1n2128a series power silicon rectifier diodes, 35 a/40 a/60 a vishay high power products fig. 9 - maximum forward voltage vs. forward current, 1n1183a series fig. 10 - maximum non-repetitive surge current vs. number of current pulses, 1n1183a series fig. 11 - maximum non-repetitive surge current vs. number of current pulses, 1n2128a series fig. 12 - maximum allowable case temperature vs. average forward current, 1n2128a series fig. 13 - maximum low level forward power loss vs. average forward current, 1n2128a series fig. 14 - maximum high level forward power loss vs. average forward current, 1n2128a series
www.vishay.com for technical questions, contact: ind-modules@vishay.com document number: 93492 6 revision: 25-may-09 1n1183, 1n3765, 1n1183a, 1n2128a series vishay high power products power silicon rectifier diodes, 35 a/40 a/60 a fig. 15 - maximum forward voltage vs. forward current, 1n2128a series links to related documents dimensions www.vishay.com/doc?95360
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